| Fundamentals of Modern VLSI Devices Revised Edition Contributor(s): Taur, Yuan (Author), Ning, Tak H. (Author) |
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ISBN: 1108480020 ISBN-13: 9781108480024 Publisher: Cambridge University Press OUR PRICE: $64.59 Product Type: Hardcover - Other Formats Published: February 2022 |
| Additional Information |
| BISAC Categories: - Computers | Logic Design - Technology & Engineering | Electrical - Technology & Engineering | Electronics - Optoelectronics |
| Dewey: 621.395 |
| LCCN: 2021029073 |
| Physical Information: 1.2" H x 6.9" W x 9.8" (2.90 lbs) 622 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry. |